advanced power n-channel enhancement mode electronics corp. power mosfet lead-free package bv dss 30v low conductance loss r ds(on) 6m low profile ( < 0.7mm ) i d 15a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =100 a i d @t c =25 a i dm a p d @t a =25 w p d @t a =70 w p d @t c =25 w e as mj i ar a t stg t j rthj-c maximum thermal resistance, junction-case 4 3.7 /w rthj-a maximum thermal resistance, junction-ambient 3 58 /w data and specifications subject to change without notice continuous drain current, v gs @ 10v 4 -40 to 150 halogen-free product single pulse avalanche energy 5 operating junction temperature range total power dissipation 4 avalanche current continuous drain current, v gs @ 10v 3 12 pulsed drain current 1 120 total power dissipation 3 thermal data storage temperature range 24 total power dissipation 3 1.4 34 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 15 parameter rating drain-source voltage 30 AP1001BSQ 59 28.8 2.2 -40 to 150 201106013 1 g d s the AP1001BSQ used the latest apec power mosfet silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. the greenfet tm package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency dc-dc converters. greenfet tm sq g d d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - 4.5 6 m ? v gs =4.5v, i d =12a - 7.4 10 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 2.5 v g fs forward transconductance v ds =10v, i d =12a 12 22 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =20v ,v gs =0v - - 150 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =12a - 9 14.4 nc q gs gate-source charge v ds =13v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time 2 v ds =13v - 9 - ns t r rise time i d =12a - 55 - ns t d(off) turn-off delay time r g = 3.3 ,v gs = 10 v - 20 - ns t f fall time r d = 1.08 - 5.6 - ns input capacitance v gs =0v - 810 1300 pf c oss output capacitance v ds =25v - 295 - pf c rss reverse transfer capacitance f=1.0mhz - 150 - pf r g gate resistance f=1.0mhz - 2 3.2 source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) - - 2.7 a i sm pulsed source current ( body diode ) 1 - - 120 a v sd forward on voltage 2 i s =12a, v gs =0v - - 1 v t rr reverse recovery time i s =12a, v gs =0v, - 28 42 ns q rr reverse recovery charge di/dt=100a/s - 20 30 nc notes: 1.pulse width limited by max junction temperature. 2.pulse test 4.t c measured with thermocouple mounted to top (drain) of part. 5.starting t j =25 o c , l=0.1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP1001BSQ 2 3.surface mounted on 1 in 2 copper pad of fr4 board.
ap1001bs q fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 0.0 1.0 2.0 3.0 4.0 5.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 100 120 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =15a v g =10v 0 4 8 12 16 0 0.5 1 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 4 5 6 7 8 9 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t a =25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
ap1001bs q fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thjc + t c rthja = 58 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =13v v ds =16v v ds =20v 0 200 400 600 800 1000 1200 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
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